| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4dab280a9cc16a2cd23beb832af6f93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37a07a4d873dd9de724bff58764ebc2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3175fe347038563e2612d062b25b838f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_600c83f2e38bae604b3073edf8cc5551 |
| publicationDate |
2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016013046-A1 |
| titleOfInvention |
Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices |
| abstract |
Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020384570-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102584252-B1 |
| priorityDate |
2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |