| abstract |
To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. n A composition comprising an epoxy compound (A) having a viscosity at 25° C. of at most 50 Pa·s, an amine compound (B) having a melting point or softening point of at least 80° C., and an amine compound (C) having a melting point or softening point of less than 80° C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C). |