| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2015-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f8b5353410d4d731cfb059cbeb7240
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5a8938b7f5e95c102540765b55b6d34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5813c3822dc86a95365d0f68346e5e54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cfd9ae03bfc2d73d6ece353b77521a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8767f2e64a4121229010036b60cf864a |
| publicationDate |
2016-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2016005648-A1 |
| titleOfInvention |
Method and Apparatus for Back End of Line Semiconductor Device Processing |
| abstract |
A method of forming a device may include: forming an opening through a dielectric layer and an underlying etching stop layer to expose a metal line. The method may further include the step of catalytically growing a graphene layer on an exposed surface of the metal line, and depositing an amorphous carbon layer on sidewalls of the opening. The steps of catalytically growing the graphene layer and depositing the amorphous carbon layer may be performed simultaneously. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022221881-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594483-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510657-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462470-B2 |
| priorityDate |
2013-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |