| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b76f11eb5d512ca88962d4037a1290
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05c7d84b0da7af8fbaf9d6d2acf8da80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e08906f4cf6a1a02c756f43948f2c6 |
| publicationDate |
2015-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015380526-A1 |
| titleOfInvention |
Methods for forming fin structures with desired dimensions for 3d structure semiconductor applications |
| abstract |
Methods for forming fin structure with desired materials formed on different locations of the fin structure using an ion implantation process to define an etching stop layer followed by an etching process for manufacturing three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method for forming a structure on a substrate includes performing an ion implantation process on a substrate having a plurality of structures formed thereon, forming an ion treated region in the structure at an interface between the ion treated region and an untreated region in the structure defining an etch stop layer, and performing a remote plasma etching process to etch the treated region from the substrate to exposed the untreated region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9530654-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114435-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014306317-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017207217-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600608-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264294-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886157-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211478-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107036856-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018269033-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10204764-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10192748-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764119-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018174878-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016118260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10147584-B2 |
| priorityDate |
2014-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |