| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J183-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate |
2015-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f81fa53f81fcf334d9de9716449be03f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47751168cd70da1e401d4f968d7428d7 |
| publicationDate |
2015-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015380292-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
A method for manufacturing a semiconductor device includes: bonding at least a part of the rear surface of a semiconductor wafer, and a supporting substrate in use of using a silane coupling agent; forming a functional structure on a front surface of the semiconductor wafer; placing a condensation point of laser light transmitted through the semiconductor wafer on a bonding interface between the semiconductor wafer and the supporting substrate, and irradiating the bonding interface with the laser light, thereby forming a fracture layer on at least a part of an outer circumferential section of the bonding interface; separating the bonding interface; and carrying out rear surface processing on the rear surface of the semiconductor wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023099232-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991611-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017263457-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017156195-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019027391-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10373830-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9688062-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362038-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4258362-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015258767-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11267076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I759988-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11020092-B2 |
| priorityDate |
2013-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |