| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716e9a2606ffd4ba1a2a3917e4a402fd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-17 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18319
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-187 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-187 |
| filingDate |
2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6685bd45ad79bae7b1408703ac857139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57c67d5f138ca1de93d05e8ad5e9d630
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_345482cadc1bedf0f6fa7ee7e2875227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_597df61e1cc93b431b306dad6880e2e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39ec6b648ccb5fe57e9a3023b9bdcdfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2395c2c34d7b7edaafe1163d48c2f64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63d91ece5d35b8367c35937c1ae73c55 |
| publicationDate |
2015-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015372452-A1 |
| titleOfInvention |
Two-dimensional photonic crystal laser and method of producing the same |
| abstract |
A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of Al α Ga 1-α As (0<α<1) or (Al β Ga 1-β ) γ In 1-γ P (0<=β<1, 0<γ<1) with modified refractive index areas (air holes) 151 periodically arranged therein and an epitaxial growth layer 16 created on the two-dimensional photonic crystal layer 15 by an epitaxial method. Since Al α Ga 1-α As and (Al β Ga 1-β ) γ In 1-γ P are solid even at high temperatures, the air holes 151 will not be deformed in the process of creating the epitaxial growth layer 16 , so that the performance of the two-dimensional photonic crystal layer 15 as a resonator can be maintained at high levels. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111342344-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111342344-A |
| priorityDate |
2010-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |