| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c60cbeb32859b75d089103559c856e48 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 |
| filingDate |
2014-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77e730cec5bcebcaac3ede987358f0b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ae21a31ba0924336a30cb6350879832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1070d7ecc0414d66b0c7d62957ee861 |
| publicationDate |
2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015361585-A1 |
| titleOfInvention |
Method for manufacturing sic single-crystal substrate for epitaxial sic wafer, and sic single-crystal substrate for epitaxial sic wafer |
| abstract |
Provided is a method for manufacturing an SiC single-crystal substrate making it possible to obtain an epitaxial SiC wafer provided with a high-quality SiC single-crystal thin film devoid of surface defects, etc. Also provided is said SiC single-crystal substrate. A method for manufacturing an SiC single-crystal substrate for an epitaxial SiC wafer having a high-quality SiC single-crystal thin film devoid of surface defects, etc., wherein the surface of the SiC single-crystal substrate is polished using chemical-mechanical polishing (CMP) at a speed of no more than 100 nm/h to remove the surface in a thickness of 100 nm or greater, and produce no more than 1 approximately circular pit per cm 2 , the pit having a diameter of 0.5-1.5 μm and a depth of 50-500 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11376703-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114761628-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685333-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016155640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10774444-B2 |
| priorityDate |
2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |