| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2014-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f305f9a082ca36227e516ae901353bdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efdfe150d51fb48b73bf965f96c3eae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9b0ed5c62cb9c10030aa1e961f620f |
| publicationDate |
2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015348965-A1 |
| titleOfInvention |
Structure and formation method of semiconductor device structure with metal gate |
| abstract |
A structure and a formation method of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure also includes a dielectric structure over the semiconductor substrate and adjacent to the gate stack. The dielectric structure is in direct contact with the work function layer and the metal filling. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021167179-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861752-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811320-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152267-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461171-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3624178-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018331194-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I707397-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10541308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018323272-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019103325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11201230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658473-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107902-B2 |
| priorityDate |
2014-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |