http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015348631-A1

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filingDate 2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace6cbfded7195598f5f4635777af04c
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publicationDate 2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015348631-A1
titleOfInvention Nonvolatile memory, nonvolatile programmable logic switch including nonvolatile memory, and nonvolatile programmable logic circuit
abstract A nonvolatile memory according to an embodiment includes a memory cell, the memory cell including: a memory transistor including a source, a drain, a gate electrode disposed above a channel between the source and the drain, and a gate insulating film disposed between the channel and the gate electrode; and a fuse element disposed between the gate electrode and a wiring line to which the gate electrode of the memory transistor is connected.
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Total number of triples: 30.