| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_083da14eddcdea49500a769dcdf47b6a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-077 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0368 |
| filingDate |
2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77c71b24571918dc2aa26b3672e2db09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f31443568712f64e92c92059d8b939aa |
| publicationDate |
2015-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015340544-A1 |
| titleOfInvention |
Method for annealing a thin film photovoltaic cell device |
| abstract |
A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C. |
| priorityDate |
2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |