| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c2d1b17808513c2549c0ab26f24078d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2015-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed5f65679eb10a2a2b34a89e5ed3be86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e4214195685ee03ca35c8d4c85e79ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24c9255ac6c82d4bbd05131ab54b4961 |
| publicationDate |
2015-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015340322-A1 |
| titleOfInvention |
Rf switch structure having reduced off-state capacitance |
| abstract |
An RF switch structure having reduced off-state capacitance is disclosed. The RF switch structure includes an RF switch branch having at least three transistors coupled in series within a device layer. Inter-metal dielectric (IMD) layers are disposed over the device layer. At least one of the IMD layers has an effective dielectric constant that is lower than 3.9. In one exemplary embodiment, the IMD layers are made of silicon dioxide having micro-voids. In another exemplary embodiment, the IMD layers are made of silicon dioxide that includes carbon doping. In either exemplary embodiment, an effective dielectric constant ranges from about 3.9 to around 2.0. In another exemplary embodiment, the IMD layers are made of silicon dioxide having trapped air bubbles that provide an effective dielectric constant that ranges from about 2.0 to 1.1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11146259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107306477-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021375746-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107306477-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3565118-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106656128-A |
| priorityDate |
2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |