| abstract |
A method of fabricating a memory device includes forming a mask over a top surface of a stack of alternating insulating material layers and control gate electrodes located over a substrate, wherein the stack has a memory opening extending vertically through the stack, a semiconductor channel extends vertically in the memory opening, and a memory film is located in the memory opening between the semiconductor channel and the plurality of control gate electrodes, and the mask covers a first portion of an upper insulating layer of the stack and exposes a second portion of the upper insulating layer adjacent to the memory opening, etching the upper insulating layer through the mask to provide a recess in the second portion of the upper insulating layer, and forming a conductive material within the recess to provide a select gate electrode adjacent to the semiconductor channel in the memory opening. |