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publicationDate 2015-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015318184-A1
titleOfInvention Directional chemical oxide etch technique
abstract A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching technique until the nitride layer is exposed, each iterative etching step includes; using an isotropic etching technique to remove a portion of the oxide layer, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the trench, then using an anisotropic etching technique to remove the salt from the bottom of the trench, leaving salt on the sidewalls of the trench.
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