Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f01682eeaecc5bac09a769243d6aba2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_241d475c177271a18f8282efd70696fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ba5813d192c81e50756d438b82a3449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee0bbb2d8b53546304dcb82f754e429 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffd1edcf314eab2d0adf27fd600dc66 |
publicationDate |
2015-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015318184-A1 |
titleOfInvention |
Directional chemical oxide etch technique |
abstract |
A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching technique until the nitride layer is exposed, each iterative etching step includes; using an isotropic etching technique to remove a portion of the oxide layer, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the trench, then using an anisotropic etching technique to remove the salt from the bottom of the trench, leaving salt on the sidewalls of the trench. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261510-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453751-B2 |
priorityDate |
2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |