| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_290ae5f4020d38a1fdb8067fd4051eae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f731a389160b4e7875bf867a64df238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51ae6cffdeee2d071fac3aa3f2d4af4c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D471-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D471-22 |
| filingDate |
2015-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f881c79fa2e281558d4a9b291f75245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d666039b151fde5c2573955cf13cbdb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4d24a100c998392a05ea383db27582 |
| publicationDate |
2015-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015303382-A1 |
| titleOfInvention |
Bay-Annulated Indigo (BAI) As An Excellent Electron Accepting Building Block for High Performance Organic Semiconductors |
| abstract |
A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110872376-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113493559-A |
| priorityDate |
2014-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |