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filingDate 2015-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015303189-A1
titleOfInvention Semiconductor device
abstract A semiconductor device which uses a fin-type semiconductor layer to form a bipolar transistor. The substrate of the device is a semiconductor substrate. A collector is a first-conductivity type impurity region which is formed in the semiconductor substrate. A base is a second-conductivity type impurity region which is formed in the surface layer of the collector. A first semiconductor layer is a fin-type semiconductor layer which lies over the base. An emitter is formed in the first semiconductor layer and its bottom is coupled to the base. A first contact is coupled to the collector, a second contact is coupled to the base, and a third contact is coupled to the emitter.
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