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filingDate 2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_176a8fb790cf28e309f5c4c381c055c1
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publicationDate 2015-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015295006-A1
titleOfInvention Light sensing device and manufacturing method thereof
abstract A light sensing device includes a substrate, a control unit and a light sensing unit. The control unit and the light sensing unit are disposed on the substrate. The control unit includes a gate electrode, a gate insulation layer, an oxide semiconductor pattern, a source electrode and a drain electrode. The gate insulation layer is disposed on the gate electrode, and the oxide semiconductor pattern is disposed on the gate insulation layer. The light sensing unit includes a bottom electrode, a light sensing diode and a top electrode. The light sensing diode is disposed on the bottom electrode, and the top electrode is disposed on the light sensing diode. The gate insulation layer partially covers the top electrode, and the gate insulation layer has a first opening partially exposing the bottom electrode. The drain electrode is electrically connected to the bottom electrode via the first opening.
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