| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de130824d36dca07885b82fe8e3362b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0480b1a1cd46fa3d8c0936110208cd77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48d3f6b2d11501b1170de420ae4fee32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b30216ccba3c6db4a0b7239be0651fb |
| publicationDate |
2015-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015294874-A1 |
| titleOfInvention |
Device and method of fabricating a semiconductor device having a t-shape in the metal gate line-end |
| abstract |
A method of fabricating a metal gate structure in a semiconductor device is disclosed. The method comprises removing a dummy poly gate, removing IL oxide and STI using a dry etch process and a wet lateral etch process to form a T-shape void in the semiconductor device, and depositing metal gate material in the T-shape void to form a T-shape structure in a metal gate line-end. A semiconductor device fabricated from a process that included the removal of a dummy poly gate is disclosed. The semiconductor device comprises an OD fin and a metal gate fabricated above a section of the OD fin and adjacent to a side section of the OD fin. The metal gate has a T-shape structure in a metal gate line-end. The T-shape structure was formed by removing IL oxide and STI using a dry and a wet lateral etch process to form a T-shape void. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171062-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200036836-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102184593-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015263136-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9634122-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741672-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019172926-A1 |
| priorityDate |
2014-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |