Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_579a1ae81d4e16c44ea0d71e5dc32558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b5008740855039d11fa895d83a2d075 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16 |
filingDate |
2015-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44ef85b18390d5ea49ed3f6696d59801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b25deb066f1eee718707b3010359c5a |
publicationDate |
2015-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015294695-A1 |
titleOfInvention |
Semiconductor resistive memory devices including separately controllable source lines |
abstract |
A magnetic memory device can include a plurality of separately controllable magnetic memory segments configured to store data. A plurality of separately controllable source lines can each be coupled to a respective one of the plurality of separately controllable magnetic memory segments. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10522220-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022366984-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106782639-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019051348-A1 |
priorityDate |
2014-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |