| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac9107e6698efbb9b54762fcbdb24a28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b37ec64ff51ba9f5fa980947f6f2b1c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b87c32ac2770f831dfffe294ebc6b88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41ac7ff6ab574ca3737b892da2ebfe6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed462c7aa1bdb76fd21c5712a21a34ac |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd888c82d9e53dffa76dc90300fd5259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68a4283912279fc47ee9696757a168b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e937520b1979a23a54e019a01a6e80d |
| publicationDate |
2015-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015287867-A1 |
| titleOfInvention |
Photovoltaic device and method for manufacturing the same |
| abstract |
Provided is a photovoltaic device prepared with a semiconductor including a localized level or an intermediate band in a forbidden band and capable of improving the performance than before. The photovoltaic device includes a plurality of first layers made of a first semiconducting material and a plurality of second layers made of a second semiconducting material that is different from the first semiconducting material, wherein the second semiconducting material includes a localized level or intermediate band in a forbidden band, the first layers and the second layers are alternately laminated one by one, at least two of the second layers are each disposed between a pair of the first layers, and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material. |
| priorityDate |
2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |