http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015287793-A1

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filingDate 2015-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015287793-A1
titleOfInvention Semiconductor device, module, and electronic device
abstract A transistor with favorable electrical characteristics is provided. A transistor with stable electrical characteristics is provided. A transistor having a low off-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device includes a first conductor, a second conductor, a third conductor, an oxide semiconductor, and an insulator. The oxide semiconductor includes a first region, a second region, and a third region. The oxide semiconductor overlaps with the first conductor with the insulator therebetween in the first region. The oxide semiconductor is in contact with the second conductor in the second region. The oxide semiconductor is in contact with the third conductor in the third region. The oxide semiconductor includes a fourth region having a single crystal structure. The fourth region includes the first region.
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