| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31796
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate |
2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc0c2285a68b6bf50ad5a115f842e8e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ee4847a3d7f9148b71cc42288090b81 |
| publicationDate |
2015-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015286140-A1 |
| titleOfInvention |
Substrate for high-resolution electronic lithography and corresponding lithography method |
| abstract |
In the field of very high-energy (50 keV or more) electron-beam lithography, a layer to be patterned by lithography is borne by a holding structure that comprises a substrate (for example made of silicon) and an intermediate layer made of a porous material of density lower than that of the same but non-porous material, this material, notably silicon or carbon nanotubes, having a low atomic number, lower than 32 and preferably lower than 20. This structure decreases the influence of backscattered electrons on high-resolution lithographic patterns. |
| priorityDate |
2012-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |