| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5227534d5452763715e3b63f856057cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2013-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ade4dc7acf5e1acef9585bb6ab0cde36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f737ef7f57230244bb2c7fcd64f186a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeed873a410a8ea1f235a25150f181b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b1825c42181a04bae0a949e06f753af |
| publicationDate |
2015-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015276667-A1 |
| titleOfInvention |
Integrated circuit with sensing transistor array, sensing apparatus and measuring method |
| abstract |
Integrated circuit ( 100 ) sensor array, comprising a semiconductor substrate ( 110 ); an insulating layer ( 120 ) over said substrate; an first transistor ( 140 a ) on said insulating layer, the first transistor comprising an exposed functionalized channel region ( 146 a ) in between a source region ( 142 a ) and a drain region ( 144 ) for sensing an analyte in a medium; a second transistor ( 140 b ) on said insulating layer, the second transistor comprising an exposed channel region ( 146 b ) in between a source region ( 142 b ) and a drain region ( 144 ) for sensing a potential of said medium; and a voltage bias generator ( 150 ) conductively coupled to the semiconductor substrate for providing said transistors with a bias voltage, said voltage bias generator being responsive to the second transistor. A sensing apparatus comprising such an IC and an analyte measurement method using such an IC are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10845450-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11531027-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019202206-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10794856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018538518-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10807373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017363704-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114674897-A |
| priorityDate |
2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |