| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate |
2015-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb0ba0acac9dba764380365ec40ba39d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dac8eaab4dbc772ae2ea614f3340d311 |
| publicationDate |
2015-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015270353-A1 |
| titleOfInvention |
Semiconductor device and method for producing the same |
| abstract |
A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1×10 18 cm −3 or more and 1×10 22 cm −3 or less; and a metal layer provided on the SiC region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705533-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021273128-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017103900-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302811-B2 |
| priorityDate |
2014-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |