| abstract |
A method of forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object includes forming a silicon film on the trench of the target object, etching the silicon film, oxidizing the silicon film subjected to the etching to form a first silicon oxide film, and forming a second silicon oxide film on the first silicon oxide film to cover the first silicon oxide film formed through the oxidizing the silicon film while the second silicon oxide film is buried in the trench of the target object. |