| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-3248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-3272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
| filingDate |
2015-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_425aea47d6a21985c9e0a7dfe1aefae9 |
| publicationDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015263312-A1 |
| titleOfInvention |
Thin film transistor element substrate, method of producing the substrate, and organic el display device including the thin film transistor element substrate |
| abstract |
The thin film transistor element substrate of the present disclosure includes a first moisture barrier layer covering the gate insulating layer and the gate electrode, covering the contact regions of the oxide semiconductor layer other than the connecting portion of the contact region connected to the source electrode and the connecting portion of the contact region connected to the drain electrode, and covering an surface of the substrate on which the oxide semiconductor layer is not disposed. The first moisture barrier layer includes a metal oxide and is formed by atomic layer deposition. The first moisture barrier layer formed by atomic layer deposition is in contact with a pair of contact regions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3154090-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593809-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014356-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3399555-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10896938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108172592-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11758771-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019131564-A1 |
| priorityDate |
2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |