Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
filingDate |
2014-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d31e06a491c00b1cf00f4ff541cacb |
publicationDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015263090-A1 |
titleOfInvention |
Semiconductor device |
abstract |
According to one embodiment, a semiconductor device includes a silicon substrate, a first semiconductor element, a first semiconductor layer, and a second semiconductor element. The silicon substrate includes a first portion and a second portion. The first portion has a first face. The second portion has a second face. An angle between the first face and the second face is 125 degrees or more and 126 degrees or less. The first semiconductor element is provided at the first portion. The first semiconductor layer is provided on the second face. The second semiconductor element is provided at the first semiconductor layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3955313-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4210088-A1 |
priorityDate |
2014-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |