| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a95c00f24197c9000c1fa5b13d43cb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f01682eeaecc5bac09a769243d6aba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_777773759ad9486e666816a6958882a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91a1ec0cf2e4f48c853e54e6cf30f941 |
| publicationDate |
2015-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015255458-A1 |
| titleOfInvention |
Replacement metal gate stack for diffusion prevention |
| abstract |
A method of forming a semiconductor structure includes depositing a gate dielectric layer lining a recess of a gate structure formed on a substrate with a first portion of the gate dielectric layer covering sidewalls of the recess and a second portion of the gate dielectric layer covering a bottom of the recess. A protective layer is deposited above the gate dielectric layer and then recessed selectively to the gate dielectric layer so that a top surface of the protective layer is below of the recess. The first portion of the gate dielectric layer is recessed until a top of the first portion of the gate dielectric layer is approximately coplanar with the top surface of the protective layer. The protective layer is removed and a conductive barrier is deposited above the recessed first portion of the gate dielectric layer to cut a diffusion path to the gate dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11024515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106711046-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019164960-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658473-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020243520-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017365676-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018190497-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347729-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583486-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475788-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707132-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264383-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108878292-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652141-B2 |
| priorityDate |
2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |