abstract |
Sealing force between a metal case and a power semiconductor module is improved. In a power semiconductor module 3 , peripheral side surfaces of power semiconductor devices 31 U and 31 L and conductor plates 33 to 36 are integrated by being covered with a first sealing resin 6 . An oxide layer (rough surface layer) 46 is formed on an inner surface of a metal case 40 . A fluid resin material is injected into a space S between the oxide layer 46 provided to the metal case 40 and a power semiconductor module 30 , and then a second sealing resin 52 is formed. The second sealing resin 52 fills dents of the oxide layer 46 , and therefore sealing force improves. |