http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015236198-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6900162c0a64e321929e285aef793d73
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
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filingDate 2015-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_660e26228f02a298e3265b0222c4ef9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21ab4ab4b154cabcec3f1120239a2511
publicationDate 2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015236198-A1
titleOfInvention Group III Nitride Semiconductor Light-Emitting Device And Production Method Therefor
abstract The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. A light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a protective layer, and a barrier layer sequentially deposited. The protective layer has a layered structure comprising a second protective layer disposed in contact with and on the well layer, and a first protective layer disposed in contact with and on the second protective layer. The second protective layer is formed of GaN. The first protective layer is formed of AlGaInN. The first protective layer has a bandgap larger than that of the well layer and not larger than that of the barrier layer. Moreover, the first protective layer has an In composition ratio of more than 0% and not more than 4%.
priorityDate 2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.