| abstract |
A vapor phase growth method according to embodiments uses a vapor phase growth apparatus including a reaction chamber, a transfer chamber, and a standby chamber. After a film containing gallium (Ga) is formed on a first substrate, a deposit adhering to a support is covered with a coating film or is removed. After that, an aluminum nitride film is formed successively on a plurality of substrates having a silicon (Si) surface, and the substrates are transferred into the standby chamber. Then, the substrates are transferred sequentially from the standby chamber into the reaction chamber, such that a film containing gallium (Ga) is formed successively on the substrates. |