| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53f347c8f604f15767e8e73fec62095a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0612 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0215 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate |
2015-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcf2f4123a164ac51969d13d33daa638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f48e43e8f8e43de066589e1a99e77ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31637bb423cf5287b9203465eb84ac59 |
| publicationDate |
2015-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015222086-A1 |
| titleOfInvention |
Waveguide-coupled vertical cavity laser |
| abstract |
An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111129941-A |
| priorityDate |
2013-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |