| abstract |
A method of manufacturing a semiconductor light emitting device, the method including: a particle arranging step for arranging a plurality of particles M in a monolayer on a substrate S, a particle etching step for dry etching the plurality of particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not etched substantially; and a substrate etching step for dry etching the substrate S by using the plurality of particles M 1 after the particle etching step as an etching mask, thereby forming an uneven structure on one surface X the substrate S. |