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filingDate 2013-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ca3c2a26f420278df534d21527a1aa5
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publicationDate 2015-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015214401-A1
titleOfInvention ABSORBENT Cu2ZnSn(S,Se)4-BASED MATERIAL HAVING A BAND-SEPARATION GRADIENT FOR THIN-FILM PHOTOVOLTAIC APPLICATIONS
abstract An arrangement for a stack of a photovoltaic cell comprises a first photon-absorbing layer ( 11 ) which includes sulphur (S) and selenium (Se). The first layer ( 11 ) comprises a variation, along the direction (Z) of the thickness (t) of the first layer, in the proportion of sulphur with respect to the sum of the proportions of sulphur and of selenium, the said variation being such that the first layer ( 11 ) exhibits a band-separation gradient along the direction (Z) of the thickness (t) of the first layer ( 11 ). The invention also relates to a manufacturing process and to an implemental apparatus.
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