| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2af4fa54541ffebbf8d9c243383df60 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3459 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10 |
| filingDate |
2014-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d44e3b1f24f29cdd7442b1672bb2c829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5243655f35848f2fa6dd0c38e872e0ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d639cfda08b693f1f6d87e6274a9b78a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb4c4e46c5fe818a3d790b65e96baa38 |
| publicationDate |
2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015206593-A1 |
| titleOfInvention |
Programming and verifying for non-volatile storage |
| abstract |
Non-volatile storage systems, and methods for programming non-volatile storage elements of non-volatile storage systems, are described herein. A method for programming a non-volatile storage element includes performing a plurality of program-verify iterations for the non-volatile storage element. This includes inhibiting programming of the non-volatile storage element when a present program-verify iteration is less than a threshold corresponding to a target data state that the storage element is being programmed to. This also includes enabling programming of the non-volatile storage element when the present program-verify iteration is greater than or equal to the threshold corresponding to the target data state that the storage element is being programmed to. Inhibiting programming of the non-volatile storage element causes boosting of a channel voltage of the storage element, which speeds up programming of one or more further non-volatile storage elements neighboring the boosted storage element, compared to if there were no such boosting. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9842655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107633864-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021407604-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111863090-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10049759-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017099927-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110556146-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11250920-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016306579-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10331366-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I733706-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113284541-A |
| priorityDate |
2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |