| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate |
2014-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2210e489ed4f14ee0fd85948dcd85bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c4139ee16e2d8956841cd9c49e2a7ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b36986f837e5fbc816e4ef1bb4781ed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b21afa5325c4ac7f197c2da86f8e55ee |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015200332-A1 |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer. |
| priorityDate |
2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |