| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-36 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B9-19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B11-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-34 |
| filingDate |
2013-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86c818f819974f9e6ab41e5509d6dd0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd3b14b36c3ce127eb1780518630dc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b23bfabc02a53a1fba640781374d5b36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_545c5a80e7a31efe9c1786d41bfb3583 |
| publicationDate |
2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015200082-A1 |
| titleOfInvention |
Method of manufacturing metal hydroxides and method of manufacturing ito sputtering target |
| abstract |
A method of manufacturing metal hydroxides with high mass, and a method of manufacturing an ITO target are provided. A gas diffusion electrode 20 configured such that a hydrophobic gas diffusion layer 20 a and a hydrophilic reaction layer 20 b are laminated is installed in an electrolytic bath 1 to partition the electrolytic bath. An electrolytic solution S is stored in such a portion of a settling chamber 11 as to face the reaction layer of the partitioned electrolytic bath, and indium 4 is immersed in the electrolytic solution. A voltage is applied between a cathode defined by the gas diffusion electrode and an anode defined by indium. Oxygen is supplied into such a partitioned air chamber 10 as to face the gas diffusion layer to perform electrolysis. Indium hydroxides are thus deposited in the electrolytic solution. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3674444-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021301389-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3674445-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3674446-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108735621-A |
| priorityDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |