| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2207-2209 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate |
2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a2dd418e46088c23a3e7a3de4e4bf27 |
| publicationDate |
2015-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015187778-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor storage device capable of performing low-voltage operation, reducing standby current, and decreasing memory size is provided. The semiconductor storage device is a semiconductor device including first to fourth transistors and a capacitor. The first transistor has a function of supplying a first signal to the capacitor. The capacitor has a function of accumulating electric charge based on the first signal. The second transistor has a function of supplying the electric charge based on the first signal to a gate of the third transistor. The third transistor has a function of outputting a first potential to a wiring and a function of supplying the first potential to a gate of the fourth transistor. The fourth transistor has a function of supplying a second potential to the capacitor through the second transistor. |
| priorityDate |
2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |