| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cc4dab28b579bfe5111b36ba406fe13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd557b31dd75675dc2d3f716bbd1fc07 |
| publicationDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015179811-A1 |
| titleOfInvention |
Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus |
| abstract |
There are provided a thin film transistor having a simple structure that allows reduction in leakage current at the time of gate negative bias, and a method of manufacturing the thin film transistor, and a display unit and an electronic apparatus. The thin film transistor includes: a gate electrode; a semiconductor film including a channel region that faces the gate electrode; and an insulating film provided at least at a position near an end portion on the gate electrode side of side walls of the semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11249364-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404584-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10504939-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015280002-A1 |
| priorityDate |
2012-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |