Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80973ca8e1b3acbac7208592978d413c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311bce5bc53e6b5bcf81e9e374b9fa3f |
publicationDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015179429-A1 |
titleOfInvention |
Method for treating surface of semiconductor layer, semiconductor substrate, method for making epitaxial substrate |
abstract |
A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312344-B2 |
priorityDate |
2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |