| abstract |
Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. The semiconductor substrate is exposed to bromine radicals, hydrogen radicals, or a combination thereof. An oxide layer is formed above the semiconductor substrate. The semiconductor substrate is held within a controlled atmosphere at least from the completion of the exposing of the semiconductor substrate to bromine radicals, hydrogen radicals, or a combination thereof and the beginning of the forming of the oxide layer. |