Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5351c62aee4203f2be2944f21a6def2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 |
filingDate |
2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a73db6ee82430232a0cdda0d4b84c639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e4ff67094dd79eabfc5cb3c87e5db57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6786ef7ead6d11775d59c8a9d0aee585 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d3811e44b38815a2ff8c172f4296c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c3e7c2e4a3471271c426ab967e0647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c2d9183146583b8abb26a3c9b25318 |
publicationDate |
2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015167154-A1 |
titleOfInvention |
Method for implanted-ion assisted growth of metal oxide nanowires and patterned device fabricated using the method |
abstract |
An embodiment of the present disclosure provides a method of growing metal oxide nanowires by ion implantation, the method including the steps of: depositing a metal oxide thin film on a substrate; implanting ions into the metal oxide thin film; and heating the ion-implanted metal oxide thin film to grow metal oxide nanowires. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110550869-A |
priorityDate |
2013-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |