| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4ec3b5be799cb6cc79b65d3fda00636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66192d80ff640af3f0232e15b520a676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8932bc6e6ae7ca8af9d5130d896fffa3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d5c0758c6b970ea9c539d65b7c6135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6f7554168464bdcda6ec726a799d3fb |
| publicationDate |
2015-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015155234-A1 |
| titleOfInvention |
Interconnect Structure and Method for Forming the Same |
| abstract |
Interconnect structures and methods for forming the same are described. A method for forming an interconnect structure may include: forming a low-k dielectric layer over a substrate; forming an opening in the low-k dielectric layer; forming a conductor in the opening; forming a capping layer over the conductor; and forming an etch stop layer over the capping layer and the low-k dielectric layer, wherein the etch stop layer has a dielectric constant ranging from about 5.7 to about 6.8. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020058892-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020067011-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018151390-A1 |
| priorityDate |
2013-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |