| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f276d519ba89eed523a468701f069b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c35d41ad7464221b4b3a8c7f85fa8a5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84543dec5fb23ff409eb13006c251942 |
| publicationDate |
2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015137119-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245958-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10141425-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437747-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502580-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214474-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644165-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106057679-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698275-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859401-B2 |
| priorityDate |
2009-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |