http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015132929-A1

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filingDate 2013-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_715aac018496ecbf13599f32d6c9f911
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publicationDate 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015132929-A1
titleOfInvention Method for injecting dopant into substrate to be processed, and plasma doping apparatus
abstract Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH 3 , an inert gas, and H 2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.
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