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publicationDate 2015-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015115507-A1
titleOfInvention Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers
abstract A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AION powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.
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