| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-2605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51d0e8b38b8c3e72db547058fe20d451
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8358fc7712ffc46eff7cf4727ea683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87 |
| publicationDate |
2015-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015109019-A1 |
| titleOfInvention |
Method for evaluating semiconductor device |
| abstract |
A method for evaluating a buried channel in a semiconductor device including a semiconductor layer having a stacked-layer structure is provided. A method for evaluating a semiconductor device is provided, which includes the steps of: electrically short-circuiting a source and a drain of a transistor; applying DC voltage and AC voltage to a gate to obtain a CV characteristic that indicates a relationship between the DC voltage and a capacitance between the gate and each of the source and the drain; and determining that a semiconductor layer of the transistor includes a stacked-layer structure, when the capacitance in a region in an accumulation state in the CV characteristic is increased stepwise. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106653641-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9847431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10036780-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017108545-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134914-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9960261-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10194104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10796903-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10094867-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106601641-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016005871-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9806200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014327445-A1 |
| priorityDate |
2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |