| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2013-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f18bbabc5671e620a67fbc1e94eb5e81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8cdd6e17b972aa406f17f63f5f5ed72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4 |
| publicationDate |
2015-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015099373-A1 |
| titleOfInvention |
Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and recording medium |
| abstract |
In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017175266-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022212708-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10431452-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018204716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10590534-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022033989-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11786946-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102270005-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019283093-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11661669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180085358-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4116459-A1 |
| priorityDate |
2012-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |