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filingDate 2013-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_076f310441f28c94ec132ff2069b1d54
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publicationDate 2015-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015097224-A1
titleOfInvention Buried trench isolation in integrated circuits
abstract A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is positioned between first and second devices and comprises a first filled portion and a second filled portion. The first filled portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices.
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