| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb5746eb832dced6146d31f543e23b29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1616 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2014-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00768710e55a196dfe0586d0bbf3f755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc70617388dfa41bfabd33a9720786d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_653ab23cb52285bfecebbcca9c1ff726 |
| publicationDate |
2015-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015093876-A1 |
| titleOfInvention |
Doped Oxide Dielectrics for Resistive Random Access Memory Cells |
| abstract |
Provided are methods of fabricating memory cells such as resistive random access memory (ReRAM) cells. A method involves forming a first layer including two high-k dielectric materials such that one material has a higher dielectric constant than the other material. In some embodiments, hafnium oxide and titanium oxide form the first layer. The higher-k material may be present at a lower concentration. In some embodiments, a concentration ratio of these two high-k materials is between about 3 and 7. The first layer may be formed using atomic layer deposition. The first layer is then annealed in an oxygen-containing environment. The method may proceed with forming a second layer including a low-k dielectric material, such as silicon oxide, and forming an electrode. After forming the electrode, the memory cell is annealed in a nitrogen containing environment. The nitrogen anneal may be performed at a higher temperature than the oxygen anneal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496493-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019214556-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110021703-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490739-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711720-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022087055-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853214-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I564898-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552265-B2 |
| priorityDate |
2013-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |