| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0891
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7784 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| filingDate |
2014-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a11a5e59deaf200e9ed5a8a6ec71494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e99650f2c30ad4bdf2eb82c716425bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_689d962277b9027a64f7092d809c3f60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dd4fc4fcdf687a2523eaef4c86920d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be0c1880fe04e4604ee0cf6238ddce3a |
| publicationDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015087118-A1 |
| titleOfInvention |
Method of forming a high electron mobility transistor |
| abstract |
A method of forming a high electron mobility transistor may include: forming a second III-V compound layer on a first III-V compound layer, the second III-V compound layer and the first III-V compound layer differing in composition; forming a p-type doped region in the first III-V compound layer; forming an n-type doped region in the second III-V compound layer, the n-type doped region overlying the p-type doped region; forming a source feature over the second III-V compound layer, the source feature overlying the n-type doped region; and forming a gate electrode over the second III-V compound layer, the gate electrode disposed laterally adjacent to the source feature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7031282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I768410-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019110256-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021258765-A1 |
| priorityDate |
2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |